SIHP7N60E-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

78W Tc

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Mount :

Through Hole

Factory Lead Time :

30 Weeks

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Vgs (Max) :

±30V

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

14 ns

Package / Case :

TO-220-3

Weight :

6.000006g

Number of Terminations :

3

Turn On Delay Time :

13 ns

Rise Time :

13ns

Mounting Type :

Through Hole

Drain Current-Max (Abs) (ID) :

7A

Rds On (Max) @ Id, Vgs :

600m Ω @ 3.5A, 10V

Published :

2016

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

600V

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain-source On Resistance-Max :

0.6Ohm

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

7A

JEDEC-95 Code :

TO-220AB

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Turn-Off Delay Time :

24 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

680pF @ 100V

Element Configuration :

Single

Number of Channels :

1