SIHP7N60E-BE3

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Mfr.Part #
SIHP7N60E-BE3
Manufacturer
Vishay
Package / Case
TO-220-3
Datasheet
Download
Description
N-CHANNEL 600V
Stock
2,000
In Stock :
2,000

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Drive Voltage (Max Rds On, Min Rds On) :
10V
Series :
-
Minimum Operating Temperature :
- 55 C
RoHS :
Details
Rise Time :
13 ns
Product Status :
Active
Drain to Source Voltage (Vdss) :
600 V
Transistor Type :
1 N-Channel
Maximum Operating Temperature :
+ 150 C
Package / Case :
TO-220-3
FET Feature :
-
Gate Charge (Qg) (Max) @ Vgs :
40 nC @ 10 V
Channel Mode :
Enhancement
Power Dissipation (Max) :
78W (Tc)
Vgs (Max) :
±30V
Product Category :
MOSFET
Current - Continuous Drain (Id) @ 25°C :
7A (Tc)
Brand :
Vishay / Siliconix
Subcategory :
MOSFETs
Packaging :
Tube
Number of Channels :
1 Channel
Configuration :
Single
Package :
Tube
Mounting Style :
Through Hole
Operating Temperature :
-55°C ~ 150°C (TJ)
FET Type :
N-Channel
Transistor Polarity :
N-Channel
Vgs(th) (Max) @ Id :
4V @ 250µA
Supplier Device Package :
TO-220AB
Product Type :
MOSFET
Input Capacitance (Ciss) (Max) @ Vds :
680 pF @ 100 V
Manufacturer :
Vishay
Rds On (Max) @ Id, Vgs :
600mOhm @ 3.5A, 10V
Mounting Type :
Through Hole
Datasheets
SIHP7N60E-BE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SIHP7N60E-BE3 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Number of Channels:1 Channel, Operating Temperature:-55°C ~ 150°C (TJ), Mounting Type:Through Hole, SIHP7N60E-BE3 pinout, SIHP7N60E-BE3 datasheet PDF, SIHP7N60E-BE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SIHP7N60E-BE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SIHP7N60E-BE3


N-Channel Tube 600mOhm @ 3.5A, 10V ±30V 680 pF @ 100 V 40 nC @ 10 V 600 V TO-220-3

SIHP7N60E-BE3 Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 680 pF @ 100 V.The transistor must receive a 600 V drain to source voltage (Vdss) in order to function.

SIHP7N60E-BE3 Features


a 600 V drain to source voltage (Vdss)


SIHP7N60E-BE3 Applications


There are a lot of Vishay Siliconix
SIHP7N60E-BE3 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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