SIHP6N80AE-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Channels :

1 Channel

Mounting Style :

Through Hole

Number of Elements per Chip :

1

Continuous Drain Current Id :

5A

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

5A (Tc)

Vgs (Max) :

±30V

Maximum Operating Temperature :

+ 150 C

Channel Type :

N

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

422 pF @ 100 V

Power Dissipation (Max) :

62.5W (Tc)

Package / Case :

TO-220-3

Minimum Operating Temperature :

- 55 C

Gate Charge (Qg) (Max) @ Vgs :

22.5 nC @ 10 V

Channel Mode :

Enhancement

Series :

E

Qualification :

-

Package Type :

TO-220AB

Base Product Number :

SIHP6

Product Status :

Active

Drain to Source Voltage (Vdss) :

800 V

Operating Temperature :

-55°C ~ 150°C (TJ)

FET Type :

N-Channel

Supplier Device Package :

TO-220AB

Transistor Polarity :

N-Channel

Power Dissipation :

62.5W

Pin Count :

3

Package :

Tube

Rds On (Max) @ Id, Vgs :

950mOhm @ 2A, 10V

FET Feature :

-