SIHP6N65E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

650V

Power Dissipation-Max :

78W Tc

Lead Free :

Lead Free

Fall Time (Typ) :

20 ns

Package / Case :

TO-220-3

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

820pF @ 100V

Packaging :

Bulk

Number of Terminations :

3

Power Dissipation :

78W

Continuous Drain Current (ID) :

7A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

Rise Time :

12ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

18 Weeks

DS Breakdown Voltage-Min :

650V

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.6Ohm

Rds On (Max) @ Id, Vgs :

600m Ω @ 3A, 10V

Gate to Source Voltage (Vgs) :

4V

JEDEC-95 Code :

TO-220AB

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

4V @ 250µA

Avalanche Energy Rating (Eas) :

56 mJ

Turn-Off Delay Time :

30 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Pins :

3

Number of Elements :

1

Mount :

Through Hole

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

7A

RoHS Status :

RoHS Compliant

Element Configuration :

Single

Mounting Type :

Through Hole