SIHP6N40D-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2011

Vgs(th) (Max) @ Id :

5V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Number of Elements :

1

Number of Pins :

3

Weight :

6.000006g

Package / Case :

TO-220-3

Threshold Voltage :

3V

Factory Lead Time :

8 Weeks

Number of Channels :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

1Ohm

Vgs (Max) :

±30V

Power Dissipation-Max :

104W Tc

Packaging :

Tube

Element Configuration :

Single

Drain to Source Voltage (Vdss) :

400V

Length :

10.51mm

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

311pF @ 100V

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Turn-Off Delay Time :

14 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

104W

DS Breakdown Voltage-Min :

400V

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Fall Time (Typ) :

8 ns

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

1 Ω @ 3A, 10V

Width :

4.65mm

JEDEC-95 Code :

TO-220AB

Gate to Source Voltage (Vgs) :

30V

Drain Current-Max (Abs) (ID) :

6A

Continuous Drain Current (ID) :

6A

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

Unknown

Mount :

Through Hole

Turn On Delay Time :

12 ns

Height :

9.01mm

Rise Time :

11ns