SIHP6N40D-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±30V

Turn On Delay Time :

12 ns

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

1Ohm

Published :

2011

Radiation Hardening :

No

Turn-Off Delay Time :

14 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Channels :

1

Element Configuration :

Single

DS Breakdown Voltage-Min :

400V

Number of Elements :

1

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

311pF @ 100V

Factory Lead Time :

20 Weeks

Transistor Element Material :

SILICON

Package / Case :

TO-220-3

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Weight :

6.000006g

JEDEC-95 Code :

TO-220AB

Fall Time (Typ) :

8 ns

Gate to Source Voltage (Vgs) :

30V

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Rise Time :

11ns

Vgs(th) (Max) @ Id :

5V @ 250μA

Drain Current-Max (Abs) (ID) :

6A

Power Dissipation-Max :

104W Tc

Rds On (Max) @ Id, Vgs :

1 Ω @ 3A, 10V

Power Dissipation :

104W

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

400V

Continuous Drain Current (ID) :

6A

Number of Terminations :

3

FET Type :

N-Channel

Mounting Type :

Through Hole