SIHP5N50D-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

500V

Number of Terminations :

3

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Package / Case :

TO-220-3

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 2.5A, 10V

Threshold Voltage :

3V

Turn On Delay Time :

12 ns

Drain to Source Voltage (Vdss) :

500V

Vgs(th) (Max) @ Id :

5V @ 250μA

Rise Time :

11ns

Continuous Drain Current (ID) :

5.3A

Gate to Source Voltage (Vgs) :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Weight :

6.000006g

Mount :

Through Hole

Number of Channels :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Length :

10.51mm

Transistor Application :

SWITCHING

Vgs (Max) :

±30V

Number of Elements :

1

Factory Lead Time :

8 Weeks

Width :

4.65mm

Turn-Off Delay Time :

14 ns

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Published :

2011

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

325pF @ 100V

JEDEC-95 Code :

TO-220AB

Current - Continuous Drain (Id) @ 25°C :

5.3A Tc

Fall Time (Typ) :

11 ns

Power Dissipation :

104W

REACH SVHC :

Unknown

Height :

9.01mm

Number of Pins :

3

FET Type :

N-Channel

Radiation Hardening :

No

Packaging :

Tube

Power Dissipation-Max :

104W Tc

Lead Free :

Lead Free