SIHP4N80E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Supplier Device Package :

TO-220AB

RoHS Status :

ROHS3 Compliant

Series :

E

Vgs (Max) :

±30V

Package / Case :

TO-220-3

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation-Max :

69W Tc

Factory Lead Time :

18 Weeks

Drain to Source Voltage (Vdss) :

800V

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

1.27Ohm @ 2A, 10V

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

4.3A Tc

Input Capacitance (Ciss) (Max) @ Vds :

622pF @ 100V