SIHP4N80E-BE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Type :

1 N-Channel

Gate Charge (Qg) (Max) @ Vgs :

32 nC @ 10 V

Series :

E

Current - Continuous Drain (Id) @ 25°C :

4.3A (Tc)

FET Feature :

-

Channel Mode :

Enhancement

Minimum Operating Temperature :

- 55 C

RoHS :

Details

Operating Temperature :

-55°C ~ 150°C (TJ)

Rise Time :

7 ns

Package :

Cut Tape (CT)

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Voltage (Vdss) :

800 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Type :

N-Channel

Package / Case :

TO-220-3

Brand :

Vishay / Siliconix

Maximum Operating Temperature :

+ 150 C

Configuration :

Single

Transistor Polarity :

N-Channel

Number of Channels :

1 Channel

Input Capacitance (Ciss) (Max) @ Vds :

622 pF @ 100 V

Supplier Device Package :

TO-220AB

Manufacturer :

Vishay

Vgs (Max) :

±30V

Power Dissipation (Max) :

69W (Tc)

Product Category :

MOSFET

Product Type :

MOSFET

Subcategory :

MOSFETs

Mounting Type :

Through Hole

Product Status :

Active

Mounting Style :

Through Hole

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

1.27Ohm @ 2A, 10V