SIHP30N60E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Contact Plating :

Tin

Series :

E

Operating Temperature :

-55°C~150°C TJ

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

2600pF @ 100V

Lead Free :

Lead Free

Element Configuration :

Single

Resistance :

125mOhm

Rds On Max :

125 mΩ

Min Operating Temperature :

-55°C

Package / Case :

TO-220-3

Turn-Off Delay Time :

63 ns

Factory Lead Time :

14 Weeks

Input Capacitance :

2.6nF

Radiation Hardening :

No

Max Operating Temperature :

150°C

Packaging :

Tube

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

29A Tc

Drain to Source Voltage (Vdss) :

600V

Length :

10.51mm

Power Dissipation :

250W

Turn On Delay Time :

19 ns

Number of Channels :

1

Continuous Drain Current (ID) :

29A

Rds On (Max) @ Id, Vgs :

125mOhm @ 15A, 10V

Mounting Type :

Through Hole

Width :

4.65mm

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

36 ns

REACH SVHC :

Unknown

Threshold Voltage :

2V

Drain to Source Resistance :

125mOhm

Gate to Source Voltage (Vgs) :

20V

Published :

2013

Power Dissipation-Max :

250W Tc

Vgs (Max) :

±30V

Height :

15.49mm

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Weight :

6.000006g

Rise Time :

32ns

Vgs(th) (Max) @ Id :

4V @ 250µA