SIHP30N60E-E3
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- Mfr.Part #
- SIHP30N60E-E3
- Manufacturer
- Vishay
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 29A TO220AB
- Stock
- 4,654
- In Stock ：
- 4,654
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss) :
- 600V
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Mount :
- Through Hole
- Threshold Voltage :
- 2V
- Resistance :
- 125mOhm
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 250W
- REACH SVHC :
- Unknown
- Published :
- 2011
- Continuous Drain Current (ID) :
- 29A
- Turn-Off Delay Time :
- 63 ns
- Rds On Max :
- 125 mΩ
- Vgs (Max) :
- ±30V
- Mounting Type :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 130nC @ 10V
- Rise Time :
- 32ns
- Element Configuration :
- Single
- Input Capacitance :
- 2.6nF
- Package / Case :
- TO-220-3
- Min Operating Temperature :
- -55°C
- Drain to Source Breakdown Voltage :
- 600V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Max Operating Temperature :
- 150°C
- Length :
- 10.51mm
- Turn On Delay Time :
- 19 ns
- Current - Continuous Drain (Id) @ 25°C :
- 29A Tc
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Fall Time (Typ) :
- 36 ns
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 4.65mm
- Rds On (Max) @ Id, Vgs :
- 125mOhm @ 15A, 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Radiation Hardening :
- No
- Power Dissipation-Max :
- 250W Tc
- Factory Lead Time :
- 17 Weeks
- Supplier Device Package :
- TO-220AB
- Drain to Source Resistance :
- 125mOhm
- Input Capacitance (Ciss) (Max) @ Vds :
- 2600pF @ 100V
- Number of Channels :
- 1
- Weight :
- 6.000006g
- Height :
- 15.49mm
- Packaging :
- Tube
- Datasheets
- SIHP30N60E-E3
N-Channel Tube 125mOhm @ 15A, 10V ±30V 2600pF @ 100V 130nC @ 10V 600V TO-220-3
SIHP30N60E-E3 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2600pF @ 100V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 29A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 63 ns.This device has a drain-to-source resistance of 125mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 19 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 2V, which means that it will not activate any of its functions when its threshold voltage reaches 2V.For this transistor to work, a voltage 600V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
SIHP30N60E-E3 Features
a continuous drain current (ID) of 29A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 63 ns
single MOSFETs transistor is 125mOhm
a threshold voltage of 2V
a 600V drain to source voltage (Vdss)
SIHP30N60E-E3 Applications
There are a lot of Vishay Siliconix
SIHP30N60E-E3 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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