SIHP28N65EF-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

146nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

650V

Drain-source On Resistance-Max :

0.117Ohm

Vgs (Max) :

±30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Published :

2017

Factory Lead Time :

21 Weeks

Current - Continuous Drain (Id) @ 25°C :

28A Tc

Power Dissipation-Max :

250W Tc

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Mount :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tube

Avalanche Energy Rating (Eas) :

427 mJ

Input Capacitance (Ciss) (Max) @ Vds :

3249pF @ 100V

Rds On (Max) @ Id, Vgs :

117m Ω @ 14A, 10V

Number of Elements :

1

Continuous Drain Current (ID) :

28A

Package / Case :

TO-220-3

JEDEC-95 Code :

TO-220AB

Drain to Source Voltage (Vdss) :

650V

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSFM-T3

Pulsed Drain Current-Max (IDM) :

87A

Number of Terminations :

3