SIHP28N65E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

650V

Input Capacitance (Ciss) (Max) @ Vds :

3405pF @ 100V

Vgs (Max) :

±30V

Terminal Position :

Single

Factory Lead Time :

18 Weeks

Published :

2017

Packaging :

Tube

Resistance :

122mOhm

Operating Temperature :

-55°C~150°C TJ

Number of Channels :

1

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PSFM-T3

RoHS Status :

RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

112m Ω @ 14A, 10V

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

Continuous Drain Current (ID) :

28A

Surface Mount :

No

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

29A Tc

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-220-3

Power Dissipation-Max :

250W Tc

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

84A

DS Breakdown Voltage-Min :

650V

Vgs(th) (Max) @ Id :

4V @ 250µA

JEDEC-95 Code :

TO-220AB

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Weight :

6.000006g