SIHP25N50E-BE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Package :

Tube

Minimum Operating Temperature :

- 55 C

Number of Channels :

1 Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

Product Type :

MOSFET

Configuration :

Single

Product Category :

MOSFET

Gate Charge (Qg) (Max) @ Vgs :

86 nC @ 10 V

Product Status :

Active

Transistor Type :

1 N-Channel

FET Feature :

-

Package / Case :

TO-220-3

Current - Continuous Drain (Id) @ 25°C :

26A (Tc)

Operating Temperature :

-55°C ~ 150°C (TJ)

Mounting Style :

Through Hole

Supplier Device Package :

TO-220AB

Manufacturer :

Vishay

Channel Mode :

Enhancement

Drain to Source Voltage (Vdss) :

500 V

Rise Time :

36 ns

Maximum Operating Temperature :

+ 150 C

Mounting Type :

Through Hole

Packaging :

Tube

Series :

-

Subcategory :

MOSFETs

Vgs (Max) :

±30V

Rds On (Max) @ Id, Vgs :

145mOhm @ 12A, 10V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Type :

N-Channel

Power Dissipation (Max) :

250W (Tc)

Transistor Polarity :

N-Channel

RoHS :

Details

Brand :

Vishay / Siliconix

Input Capacitance (Ciss) (Max) @ Vds :

1980 pF @ 100 V