SIHP25N40D-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Factory Lead Time :

8 Weeks

Height :

9.01mm

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

30V

Rise Time :

57ns

REACH SVHC :

Unknown

Radiation Hardening :

No

Threshold Voltage :

3V

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

JEDEC-95 Code :

TO-220AB

Input Capacitance (Ciss) (Max) @ Vds :

1707pF @ 100V

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Length :

10.51mm

Weight :

6.000006g

Avalanche Energy Rating (Eas) :

556 mJ

Turn-Off Delay Time :

40 ns

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

78A

Width :

4.65mm

Element Configuration :

Single

Turn On Delay Time :

21 ns

Drain to Source Breakdown Voltage :

400V

Rds On (Max) @ Id, Vgs :

170m Ω @ 13A, 10V

Number of Channels :

1

Mounting Type :

Through Hole

Published :

2011

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

25A Tc

Transistor Element Material :

SILICON

Fall Time (Typ) :

37 ns

Vgs(th) (Max) @ Id :

5V @ 250μA

Power Dissipation :

278W

Power Dissipation-Max :

278W Tc

Vgs (Max) :

±30V

Transistor Application :

SWITCHING

Number of Elements :

1

Package / Case :

TO-220-3

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

88nC @ 10V

Continuous Drain Current (ID) :

25A