SIHP25N40D-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.17Ohm

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

170m Ω @ 13A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

1707pF @ 100V

JEDEC-95 Code :

TO-220AB

Pulsed Drain Current-Max (IDM) :

78A

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

400V

Power Dissipation-Max :

278W Tc

Gate to Source Voltage (Vgs) :

30V

Continuous Drain Current (ID) :

25A

Vgs (Max) :

±30V

Package / Case :

TO-220-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Pin Count :

3

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

25A Tc

Factory Lead Time :

13 Weeks

Mounting Type :

Through Hole

Avalanche Energy Rating (Eas) :

556 mJ

FET Type :

N-Channel

Packaging :

Cut Tape (CT)

Number of Pins :

3

Vgs(th) (Max) @ Id :

5V @ 250μA

DS Breakdown Voltage-Min :

400V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

88nC @ 10V

Turn-Off Delay Time :

40 ns

RoHS Status :

ROHS3 Compliant

Rise Time :

57ns

Radiation Hardening :

No

Additional Feature :

AVALANCHE RATED

Number of Terminations :

3

Published :

2011

Turn On Delay Time :

21 ns

Mount :

Through Hole

Fall Time (Typ) :

37 ns