SIHP24N80AEF-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

33 ns

FET Feature :

-

RoHS :

Details

Number of Elements per Chip :

1

Input Capacitance (Ciss) (Max) @ Vds :

1889 pF @ 100 V

Maximum Operating Temperature :

+ 150 C

Series :

EF

Subcategory :

MOSFETs

Minimum Operating Temperature :

- 55 C

Channel Type :

N

Transistor Polarity :

N-Channel

Qualification :

-

Product Type :

MOSFET

Package Type :

TO-220AB

Drain to Source Voltage (Vdss) :

800 V

Manufacturer :

Vishay

Supplier Device Package :

TO-220AB

MSL :

MSL 1 - Unlimited

Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

20A (Tc)

Power Dissipation :

208W

Mounting Style :

SMD/SMT

Channel Mode :

Enhancement

Drive Voltage (Max Rds On, Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

90 nC @ 10 V

Vgs(th) (Max) @ Id :

4V @ 250µA

FET Type :

N-Channel

Power Dissipation (Max) :

208W (Tc)

Mounting Type :

Through Hole

Number of Channels :

1 Channel

Product Category :

MOSFET

Rds On (Max) @ Id, Vgs :

195mOhm @ 10A, 10V

Brand :

Vishay / Siliconix

Package / Case :

TO-220-3

Package :

Tube

Packaging :

Tube

Product Status :

Active

Continuous Drain Current Id :

20A

Operating Temperature :

-55°C ~ 150°C (TJ)

Pin Count :

3

Vgs (Max) :

±30V