SIHP24N65EF-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

FET Type :

N-Channel

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

2656pF @ 100V

Drain to Source Voltage (Vdss) :

650V

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

250W Tc

Published :

2011

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

65A

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-220-3

Number of Pins :

3

Factory Lead Time :

22 Weeks

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

122nC @ 10V

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

DS Breakdown Voltage-Min :

650V

Number of Terminations :

3

Fall Time (Typ) :

46 ns

Rise Time :

34ns

Turn On Delay Time :

24 ns

JEDEC-95 Code :

TO-220AB

Number of Channels :

1

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

80 ns

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

24A

Weight :

6.000006g

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

REACH SVHC :

Unknown

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

156m Ω @ 12A, 10V