SIHP24N65E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Weight :

6.000006g

Rds On Max :

145 mΩ

Drain to Source Voltage (Vdss) :

650V

Min Operating Temperature :

-55°C

Element Configuration :

Single

Number of Pins :

3

Lead Free :

Lead Free

Contact Plating :

Tin

Resistance :

145mOhm

Vgs(th) (Max) @ Id :

4V @ 250µA

Height :

15.49mm

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Turn On Delay Time :

24 ns

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

145mOhm @ 12A, 10V

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Package / Case :

TO-220-3

Input Capacitance (Ciss) (Max) @ Vds :

2740pF @ 100V

Number of Channels :

1

Rise Time :

84ns

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

69 ns

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

250W Tc

Continuous Drain Current (ID) :

24A

REACH SVHC :

Unknown

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

122nC @ 10V

Vgs (Max) :

±30V

Published :

2011

FET Type :

N-Channel

Input Capacitance :

2.74nF

Power Dissipation :

250W

Drain to Source Resistance :

145mOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Drain to Source Breakdown Voltage :

650V

Supplier Device Package :

TO-220AB

Mount :

Through Hole

Turn-Off Delay Time :

70 ns

Factory Lead Time :

18 Weeks

Max Operating Temperature :

150°C

Length :

10.51mm

Threshold Voltage :

2V

Width :

4.65mm