SIHP22N65E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Vgs (Max) :

±30V

Lead Free :

Lead Free

Fall Time (Typ) :

38 ns

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Turn-Off Delay Time :

73 ns

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

650V

Mount :

Through Hole

JEDEC-95 Code :

TO-220AB

Vgs(th) (Max) @ Id :

4V @ 250µA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Continuous Drain Current (ID) :

22A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

227W Tc

Rise Time :

33ns

Input Capacitance (Ciss) (Max) @ Vds :

2415pF @ 100V

Rds On (Max) @ Id, Vgs :

180m Ω @ 11A, 10V

FET Type :

N-Channel

Package / Case :

TO-220-3

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

4V

Current - Continuous Drain (Id) @ 25°C :

22A Tc

Pulsed Drain Current-Max (IDM) :

56A

REACH SVHC :

Unknown

Power Dissipation :

227W

Drain to Source Voltage (Vdss) :

650V

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Published :

2011

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

18 Weeks

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON