SIHP22N60S-E3

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Mfr.Part #
SIHP22N60S-E3
Manufacturer
Vishay
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 600V 22A TO220AB
Stock
5,754
In Stock :
5,754

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Pbfree Code :
yes
Drain to Source Breakdown Voltage :
600V
Package / Case :
TO-220-3
Terminal Finish :
Matte Tin (Sn)
Pin Count :
3
Gate Charge (Qg) (Max) @ Vgs :
110nC @ 10V
Max Operating Temperature :
150°C
Turn-Off Delay Time :
77 ns
Vgs(th) (Max) @ Id :
4V @ 250µA
Published :
2010
REACH SVHC :
Unknown
Lead Free :
Lead Free
Mount :
Through Hole
Rds On (Max) @ Id, Vgs :
190m Ω @ 11A, 10V
Fall Time (Typ) :
59 ns
Threshold Voltage :
2V
Resistance :
190mOhm
RoHS Status :
ROHS3 Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Min Operating Temperature :
-55°C
Number of Pins :
3
Packaging :
Tube
Turn On Delay Time :
24 ns
Transistor Application :
SWITCHING
Gate to Source Voltage (Vgs) :
20V
Power Dissipation :
250W
Radiation Hardening :
No
Rise Time :
68ns
Current - Continuous Drain (Id) @ 25°C :
22A Tc
Number of Elements :
1
Continuous Drain Current (ID) :
22A
Operating Mode :
ENHANCEMENT MODE
Pulsed Drain Current-Max (IDM) :
65A
JEDEC-95 Code :
TO-220AB
Configuration :
SINGLE WITH BUILT-IN DIODE
Max Power Dissipation :
250W
Input Capacitance (Ciss) (Max) @ Vds :
2810pF @ 25V
Number of Terminations :
3
Avalanche Energy Rating (Eas) :
690 mJ
JESD-609 Code :
e3
Terminal Position :
Single
Mounting Type :
Through Hole
FET Type :
N-Channel
Datasheets
SIHP22N60S-E3
Introducing Transistors - FETs, MOSFETs - Single Vishay SIHP22N60S-E3 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Number of Pins:3, Number of Terminations:3, Mounting Type:Through Hole, SIHP22N60S-E3 pinout, SIHP22N60S-E3 datasheet PDF, SIHP22N60S-E3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SIHP22N60S-E3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SIHP22N60S-E3


N-Channel Tube 190m Ω @ 11A, 10V 2810pF @ 25V 110nC @ 10V TO-220-3

SIHP22N60S-E3 Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 690 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2810pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 22A.With a drain-source breakdown voltage of 600V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 600V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 77 ns.Peak drain current for this device is 65A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 24 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.2V is the threshold voltage at which an electrical device activates any of its operations.

SIHP22N60S-E3 Features


the avalanche energy rating (Eas) is 690 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 77 ns
based on its rated peak drain current 65A.
a threshold voltage of 2V


SIHP22N60S-E3 Applications


There are a lot of Vishay Siliconix
SIHP22N60S-E3 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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