SIHP22N60E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Contact Plating :

Tin

Turn-Off Delay Time :

59 ns

Packaging :

Tube

Threshold Voltage :

2V

Factory Lead Time :

14 Weeks

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1920pF @ 100V

Mounting Type :

Through Hole

Number of Pins :

3

Number of Elements :

1

Package / Case :

TO-220-3

Height :

9.01mm

Series :

E

Number of Channels :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

54 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

227W

Width :

4.65mm

Operating Temperature :

-55°C~150°C TJ

Published :

2012

Mount :

Through Hole

FET Type :

N-Channel

JEDEC-95 Code :

TO-220AB

Transistor Application :

SWITCHING

Power Dissipation-Max :

227W Tc

Current - Continuous Drain (Id) @ 25°C :

21A Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate to Source Voltage (Vgs) :

20V

DS Breakdown Voltage-Min :

600V

REACH SVHC :

Unknown

Transistor Element Material :

SILICON

Vgs (Max) :

±30V

Gate Charge (Qg) (Max) @ Vgs :

86nC @ 10V

Number of Terminations :

3

Pulsed Drain Current-Max (IDM) :

56A

Drain to Source Voltage (Vdss) :

600V

Turn On Delay Time :

18 ns

Continuous Drain Current (ID) :

21A

Rds On (Max) @ Id, Vgs :

180m Ω @ 11A, 10V

Weight :

6.000006g

Lead Free :

Lead Free

Length :

10.51mm

Element Configuration :

Single

Rise Time :

68ns

Radiation Hardening :

No

Resistance :

180mOhm