SIHP22N60E-E3
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- Mfr.Part #
- SIHP22N60E-E3
- Manufacturer
- Vishay
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 21A TO220AB
- Stock
- 102
- In Stock ：
- 102
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- Number of Channels :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 21A
- Gate Charge (Qg) (Max) @ Vgs :
- 86nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 180m Ω @ 11A, 10V
- Threshold Voltage :
- 2V
- Contact Plating :
- Tin
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 227W
- Mount :
- Through Hole
- Published :
- 2011
- Input Capacitance (Ciss) (Max) @ Vds :
- 1920pF @ 100V
- Width :
- 4.65mm
- Vgs (Max) :
- ±30V
- Fall Time (Typ) :
- 54 ns
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 227W Tc
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Turn On Delay Time :
- 18 ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Current - Continuous Drain (Id) @ 25°C :
- 21A Tc
- Gate to Source Voltage (Vgs) :
- 20V
- JEDEC-95 Code :
- TO-220AB
- Resistance :
- 180mOhm
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Length :
- 10.51mm
- Weight :
- 6.000006g
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pulsed Drain Current-Max (IDM) :
- 56A
- Package / Case :
- TO-220-3
- Drain to Source Voltage (Vdss) :
- 600V
- Rise Time :
- 68ns
- Packaging :
- Tube
- REACH SVHC :
- Unknown
- Height :
- 15.49mm
- Pin Count :
- 3
- Additional Feature :
- AVALANCHE RATED
- Turn-Off Delay Time :
- 59 ns
- Factory Lead Time :
- 18 Weeks
- DS Breakdown Voltage-Min :
- 600V
- Number of Elements :
- 1
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- SIHP22N60E-E3
N-Channel Tube 180m Ω @ 11A, 10V ±30V 1920pF @ 100V 86nC @ 10V 600V TO-220-3
SIHP22N60E-E3 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1920pF @ 100V.This device has a continuous drain current (ID) of [21A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 59 ns.A maximum pulsed drain current of 56A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 18 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 2V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 600V.In order to operate this transistor, a voltage of 600V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
SIHP22N60E-E3 Features
a continuous drain current (ID) of 21A
the turn-off delay time is 59 ns
based on its rated peak drain current 56A.
a threshold voltage of 2V
a 600V drain to source voltage (Vdss)
SIHP22N60E-E3 Applications
There are a lot of Vishay Siliconix
SIHP22N60E-E3 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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