SIHP22N60AE-BE3

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Mfr.Part #
SIHP22N60AE-BE3
Manufacturer
Vishay
Package / Case
TO-220-3
Datasheet
Download
Description
N-CHANNEL 600V
Stock
1,946
In Stock :
1,946

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Brand :
Vishay / Siliconix
Maximum Operating Temperature :
+ 150 C
Series :
E
Rise Time :
33 ns
Manufacturer :
Vishay
Channel Mode :
Enhancement
Product Status :
Active
Rds On (Max) @ Id, Vgs :
180mOhm @ 11A, 10V
Configuration :
Single
Package / Case :
TO-220-3
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
1451 pF @ 100 V
Product Category :
MOSFET
Transistor Polarity :
N-Channel
Drain to Source Voltage (Vdss) :
600 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Type :
N-Channel
Power Dissipation (Max) :
179W (Tc)
Current - Continuous Drain (Id) @ 25°C :
20A (Tc)
Subcategory :
MOSFETs
Number of Channels :
1 Channel
Operating Temperature :
-55°C ~ 150°C (TJ)
Supplier Device Package :
TO-220AB
Product Type :
MOSFET
RoHS :
Details
FET Feature :
-
Vgs(th) (Max) @ Id :
4V @ 250µA
Mounting Type :
Through Hole
Transistor Type :
1 N-Channel
Gate Charge (Qg) (Max) @ Vgs :
96 nC @ 10 V
Packaging :
Tube
Package :
Tube
Mounting Style :
Through Hole
Minimum Operating Temperature :
- 55 C
Datasheets
SIHP22N60AE-BE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SIHP22N60AE-BE3 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Number of Channels:1 Channel, Operating Temperature:-55°C ~ 150°C (TJ), Mounting Type:Through Hole, SIHP22N60AE-BE3 pinout, SIHP22N60AE-BE3 datasheet PDF, SIHP22N60AE-BE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SIHP22N60AE-BE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SIHP22N60AE-BE3


N-Channel Tube 180mOhm @ 11A, 10V ±30V 1451 pF @ 100 V 96 nC @ 10 V 600 V TO-220-3

SIHP22N60AE-BE3 Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1451 pF @ 100 V.This transistor requires a drain-source voltage (Vdss) of 600 V.

SIHP22N60AE-BE3 Features


a 600 V drain to source voltage (Vdss)


SIHP22N60AE-BE3 Applications


There are a lot of Vishay Siliconix
SIHP22N60AE-BE3 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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