SIHP21N60EF-BE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Package :

Tube

Series :

EF

Package / Case :

TO-220-3

Product Category :

MOSFET

Manufacturer :

Vishay

Drain to Source Voltage (Vdss) :

600 V

Number of Channels :

1 Channel

Subcategory :

MOSFETs

Mounting Style :

Through Hole

Product Type :

MOSFET

Rise Time :

31 ns

Input Capacitance (Ciss) (Max) @ Vds :

2030 pF @ 100 V

Product Status :

Active

Vgs (Max) :

±30V

Operating Temperature :

-55°C ~ 150°C (TJ)

Drive Voltage (Max Rds On, Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Bulk

Base Product Number :

SIHP21

Current - Continuous Drain (Id) @ 25°C :

21A (Tc)

FET Feature :

-

Minimum Operating Temperature :

- 55 C

Transistor Polarity :

N-Channel

Power Dissipation (Max) :

227W (Tc)

Mounting Type :

Through Hole

Channel Mode :

Enhancement

Transistor Type :

1 N-Channel

Maximum Operating Temperature :

+ 150 C

RoHS :

Details

FET Type :

N-Channel

Brand :

Vishay / Siliconix

Rds On (Max) @ Id, Vgs :

176mOhm @ 11A, 10V

Supplier Device Package :

TO-220AB

Gate Charge (Qg) (Max) @ Vgs :

84 nC @ 10 V