SIHP20N50E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

184m Ω @ 10A, 10V

Continuous Drain Current (ID) :

19A

FET Type :

N-Channel

Turn-Off Delay Time :

48 ns

Published :

2001

JEDEC-95 Code :

TO-220AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

42A

Avalanche Energy Rating (Eas) :

204 mJ

Vgs (Max) :

±30V

Input Capacitance (Ciss) (Max) @ Vds :

1640pF @ 100V

Transistor Application :

SWITCHING

Number of Elements :

1

Rise Time :

27ns

Transistor Element Material :

SILICON

Factory Lead Time :

18 Weeks

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

179W Tc

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

92nC @ 10V

Threshold Voltage :

4V

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Voltage (Vdss) :

500V

Mount :

Through Hole

REACH SVHC :

Unknown

Turn On Delay Time :

17 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

19A Tc

DS Breakdown Voltage-Min :

500V

Package / Case :

TO-220-3

Number of Pins :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

3

Fall Time (Typ) :

25 ns

Number of Channels :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single

Mounting Type :

Through Hole

Packaging :

Tube