SIHP18N50C-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

270mOhm

Terminal Finish :

Matte Tin (Sn)

REACH SVHC :

Unknown

Transistor Element Material :

SILICON

Mount :

Through Hole

Drain to Source Voltage (Vdss) :

500V

JESD-609 Code :

e3

Fall Time (Typ) :

44 ns

Power Dissipation :

223W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Number of Channels :

1

Power Dissipation-Max :

223W Tc

Factory Lead Time :

8 Weeks

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

76nC @ 10V

Number of Terminations :

3

JEDEC-95 Code :

TO-220AB

Packaging :

Bulk

Number of Elements :

1

Number of Pins :

3

Threshold Voltage :

5V

Rds On (Max) @ Id, Vgs :

270m Ω @ 10A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

2942pF @ 25V

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

72A

Weight :

6.000006g

Nominal Vgs :

5 V

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn-Off Delay Time :

32 ns

Package / Case :

TO-220-3

Turn On Delay Time :

80 ns

Gate to Source Voltage (Vgs) :

30V

Rise Time :

27ns

Radiation Hardening :

No

Vgs (Max) :

±30V

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

5V @ 250μA

FET Type :

N-Channel

Pbfree Code :

yes

DS Breakdown Voltage-Min :

500V

Published :

2011

Terminal Position :

Single

Continuous Drain Current (ID) :

18A