SIHP17N80AE-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements per Chip :

1

FET Type :

N-Channel

Operating Temperature :

-55°C ~ 150°C (TJ)

Power Dissipation (Max) :

179W (Tc)

Transistor Type :

1 N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

Channel Mode :

Enhancement

Maximum Operating Temperature :

+ 155 C

FET Feature :

-

Supplier Device Package :

TO-220AB

Rise Time :

23 ns

Pin Count :

3

Minimum Operating Temperature :

- 55 C

Subcategory :

MOSFETs

Packaging :

Tube

Package Type :

TO-220AB

Gate Charge (Qg) (Max) @ Vgs :

62 nC @ 10 V

Mounting Type :

Through Hole

Power Dissipation :

179W

Drive Voltage (Max Rds On, Min Rds On) :

10V

Brand :

Vishay / Siliconix

Number of Channels :

1 Channel

Vgs (Max) :

±30V

Product Category :

MOSFET

Continuous Drain Current Id :

15A

Current - Continuous Drain (Id) @ 25°C :

15A (Tc)

Channel Type :

N

Manufacturer :

Vishay

Series :

E

Product Status :

Active

MSL :

MSL 1 - Unlimited

Mounting Style :

Through Hole

Rds On (Max) @ Id, Vgs :

290mOhm @ 8.5A, 10V

Drain to Source Voltage (Vdss) :

800 V

Package / Case :

TO-220-3

Configuration :

Single

Product Type :

MOSFET

Transistor Polarity :

N-Channel

Qualification :

-

Package :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

1260 pF @ 100 V

Base Product Number :

SIHP17

RoHS :

Details