SIHP17N60D-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

22 ns

Rds On (Max) @ Id, Vgs :

340m Ω @ 8A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

1780pF @ 100V

Radiation Hardening :

No

Continuous Drain Current (ID) :

17A

Gate Charge (Qg) (Max) @ Vgs :

90nC @ 10V

Number of Terminations :

3

Drain to Source Breakdown Voltage :

600V

Rise Time :

56ns

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Package / Case :

TO-220-3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

48A

Vgs (Max) :

±30V

Gate to Source Voltage (Vgs) :

30V

Published :

2015

Mount :

Through Hole

Number of Elements :

1

Number of Pins :

3

JEDEC-95 Code :

TO-220AB

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

30 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Channels :

1

Power Dissipation-Max :

277.8W Tc

Weight :

6.000006g

Factory Lead Time :

13 Weeks

Vgs(th) (Max) @ Id :

5V @ 250μA

Transistor Application :

SWITCHING

Turn-Off Delay Time :

37 ns

Transistor Element Material :

SILICON