SIHP17N60D-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

5V @ 250μA

Radiation Hardening :

No

Pulsed Drain Current-Max (IDM) :

48A

JEDEC-95 Code :

TO-220AB

Drain to Source Voltage (Vdss) :

600V

Number of Elements :

1

Turn On Delay Time :

22 ns

Element Configuration :

Single

Number of Channels :

1

DS Breakdown Voltage-Min :

600V

Power Dissipation-Max :

277.8W Tc

Pin Count :

3

Transistor Element Material :

SILICON

Published :

2011

Vgs (Max) :

±30V

Continuous Drain Current (ID) :

17A

Package / Case :

TO-220-3

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

340m Ω @ 8A, 10V

Gate to Source Voltage (Vgs) :

30V

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

90nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

8 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

1780pF @ 100V

Fall Time (Typ) :

30 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

Packaging :

Tube

Turn-Off Delay Time :

37 ns

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Weight :

6.000006g

RoHS Status :

ROHS3 Compliant

Rise Time :

56ns