SIHP16N50C-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

156ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

31 ns

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

REACH SVHC :

Unknown

Gate to Source Voltage (Vgs) :

30V

Time@Peak Reflow Temperature-Max (s) :

40

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Power Dissipation :

250W

Vgs(th) (Max) @ Id :

5V @ 250μA

Threshold Voltage :

3V

Transistor Application :

SWITCHING

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

1900pF @ 25V

Mount :

Through Hole

Element Configuration :

Single

Published :

2015

Mounting Type :

Through Hole

Turn On Delay Time :

27 ns

Transistor Element Material :

SILICON

Package / Case :

TO-220-3

Vgs (Max) :

±30V

Pin Count :

3

Radiation Hardening :

No

Number of Channels :

1

Pulsed Drain Current-Max (IDM) :

40A

Gate Charge (Qg) (Max) @ Vgs :

68nC @ 10V

Rds On (Max) @ Id, Vgs :

380m Ω @ 8A, 10V

Factory Lead Time :

8 Weeks

Continuous Drain Current (ID) :

16A

Number of Elements :

1

Power Dissipation-Max :

250W Tc

Weight :

6.000006g

Drain to Source Breakdown Voltage :

500V

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

FET Type :

N-Channel

JEDEC-95 Code :

TO-220AB

Turn-Off Delay Time :

29 ns

Pbfree Code :

yes

Number of Terminations :

3

Packaging :

Cut Tape (CT)