SIHP15N80AE-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Product Category :

MOSFET

RoHS :

Details

Drain to Source Voltage (Vdss) :

800 V

Subcategory :

MOSFETs

Transistor Type :

1 N-Channel

Mounting Type :

Through Hole

Pin Count :

3

Rise Time :

22 ns

Qualification :

-

Channel Mode :

Enhancement

Current - Continuous Drain (Id) @ 25°C :

13A (Tc)

Gate Charge (Qg) (Max) @ Vgs :

53 nC @ 10 V

Brand :

Vishay / Siliconix

Rds On (Max) @ Id, Vgs :

350mOhm @ 7.5A, 10V

Manufacturer :

Vishay

Package :

Tube

MSL :

MSL 1 - Unlimited

Power Dissipation (Max) :

156W (Tc)

FET Type :

N-Channel

Transistor Polarity :

N-Channel

Power Dissipation :

156W

Vgs (Max) :

±30V

Product Type :

MOSFET

Number of Channels :

1 Channel

Input Capacitance (Ciss) (Max) @ Vds :

1093 pF @ 100 V

Vgs(th) (Max) @ Id :

4V @ 250µA

Package Type :

TO-220AB

Operating Temperature :

-55°C ~ 150°C (TJ)

Number of Elements per Chip :

1

Continuous Drain Current Id :

13A

Supplier Device Package :

TO-220AB

Base Product Number :

SIHP15

Maximum Operating Temperature :

+ 155 C

Product Status :

Active

Series :

E

Minimum Operating Temperature :

- 55 C

Drive Voltage (Max Rds On, Min Rds On) :

10V

Mounting Style :

Through Hole

Channel Type :

N

FET Feature :

-

Configuration :

Single

Package / Case :

TO-220-3