SIHP15N65E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

24ns

Turn-Off Delay Time :

48 ns

Lead Free :

Lead Free

Continuous Drain Current (ID) :

15A

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Drain to Source Breakdown Voltage :

650V

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

1640pF @ 100V

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

96nC @ 10V

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

280m Ω @ 8A, 10V

Transistor Application :

SWITCHING

Vgs (Max) :

±30V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Element Configuration :

Single

Avalanche Energy Rating (Eas) :

286 mJ

Fall Time (Typ) :

25 ns

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

4V @ 250µA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Factory Lead Time :

18 Weeks

Operating Temperature :

-55°C~150°C TJ

JEDEC-95 Code :

TO-220AB

Number of Terminations :

3

Drain-source On Resistance-Max :

0.28Ohm

Power Dissipation-Max :

34W Tc

Power Dissipation :

34W

Published :

2016

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-220-3

Number of Pins :

3

Gate to Source Voltage (Vgs) :

4V