SIHP15N60E-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

180W

Rise Time :

51ns

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Channels :

1

Drain to Source Voltage (Vdss) :

600V

Turn-Off Delay Time :

35 ns

Vgs (Max) :

±30V

Turn On Delay Time :

17 ns

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate to Source Voltage (Vgs) :

20V

Resistance :

280mOhm

Factory Lead Time :

19 Weeks

Continuous Drain Current (ID) :

15A

Lead Free :

Lead Free

FET Type :

N-Channel

Radiation Hardening :

No

Max Operating Temperature :

150°C

Weight :

6.000006g

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Power Dissipation-Max :

180W Tc

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Published :

2011

Gate Charge (Qg) (Max) @ Vgs :

78nC @ 10V

Fall Time (Typ) :

33 ns

Input Capacitance (Ciss) (Max) @ Vds :

1350pF @ 100V

Input Capacitance :

1.35nF

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

280mOhm @ 8A, 10V

Number of Elements :

1

Rds On Max :

280 mΩ

Supplier Device Package :

TO-220AB

Mounting Type :

Through Hole

Min Operating Temperature :

-55°C

Package / Case :

TO-220-3

Operating Temperature :

-55°C~150°C TJ

Drain to Source Resistance :

280mOhm