SIHP14N50D-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

9.01mm

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

14A

Power Dissipation :

208W

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

208W Tc

Turn-Off Delay Time :

29 ns

Turn On Delay Time :

16 ns

Vgs (Max) :

±30V

Length :

10.51mm

Input Capacitance (Ciss) (Max) @ Vds :

1144pF @ 100V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

30V

Avalanche Energy Rating (Eas) :

56 mJ

Threshold Voltage :

3V

REACH SVHC :

Unknown

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

8 Weeks

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

400m Ω @ 7A, 10V

Number of Channels :

1

Package / Case :

TO-220-3

Radiation Hardening :

No

Weight :

6.000006g

Drain to Source Voltage (Vdss) :

500V

Published :

2015

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Rise Time :

27ns

Gate Charge (Qg) (Max) @ Vgs :

58nC @ 10V

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Width :

4.65mm

Drain-source On Resistance-Max :

0.4Ohm

Mount :

Through Hole

Number of Pins :

3

Element Configuration :

Single

FET Type :

N-Channel

JEDEC-95 Code :

TO-220AB

DS Breakdown Voltage-Min :

500V

Fall Time (Typ) :

26 ns

Transistor Element Material :

SILICON