SIHP12N65E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

380m Ω @ 6A, 10V

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

JEDEC-95 Code :

TO-220AB

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

156W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Channels :

1

Number of Terminations :

3

Transistor Application :

SWITCHING

Number of Pins :

3

Mounting Type :

Through Hole

Packaging :

Tube

Avalanche Energy Rating (Eas) :

226 mJ

Package / Case :

TO-220-3

Radiation Hardening :

No

Transistor Element Material :

SILICON

Published :

2016

Vgs (Max) :

±30V

FET Type :

N-Channel

Continuous Drain Current (ID) :

12A

Pulsed Drain Current-Max (IDM) :

28A

Input Capacitance (Ciss) (Max) @ Vds :

1224pF @ 100V

Power Dissipation :

156W

Drain to Source Breakdown Voltage :

700V

Rise Time :

19ns

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V

Fall Time (Typ) :

18 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn-Off Delay Time :

35 ns

Turn On Delay Time :

16 ns

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

18 Weeks

Mount :

Through Hole

Drain to Source Voltage (Vdss) :

650V

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Weight :

6.000006g