SIHP12N60E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On Max :

380 mΩ

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Tube

Element Configuration :

Single

Number of Elements :

1

Resistance :

380mOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Supplier Device Package :

TO-220AB

Radiation Hardening :

No

Factory Lead Time :

14 Weeks

Package / Case :

TO-220-3

Rds On (Max) @ Id, Vgs :

380mOhm @ 6A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

14 ns

Drain to Source Resistance :

320mOhm

Vgs (Max) :

±30V

Continuous Drain Current (ID) :

12A

Power Dissipation-Max :

147W Tc

Series :

E

Published :

2013

Rise Time :

19ns

Threshold Voltage :

2V

Mounting Type :

Through Hole

REACH SVHC :

Unknown

Gate Charge (Qg) (Max) @ Vgs :

58nC @ 10V

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

35 ns

Power Dissipation :

147W

Max Operating Temperature :

150°C

Drain to Source Breakdown Voltage :

600V

Number of Channels :

1

Lead Free :

Lead Free

Mount :

Through Hole

Weight :

6.000006g

Min Operating Temperature :

-55°C

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Input Capacitance :

937pF

Drain to Source Voltage (Vdss) :

600V

Fall Time (Typ) :

19 ns

Input Capacitance (Ciss) (Max) @ Vds :

937pF @ 100V

FET Type :

N-Channel