SIHP12N50E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

JEDEC-95 Code :

TO-220AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

4V

Continuous Drain Current (ID) :

10.5A

Number of Channels :

1

Power Dissipation-Max :

114W Tc

Current - Continuous Drain (Id) @ 25°C :

10.5A Tc

Drain to Source Voltage (Vdss) :

500V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Pins :

3

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Weight :

6.000006g

Vgs (Max) :

±30V

DS Breakdown Voltage-Min :

500V

Rise Time :

16ns

Package / Case :

TO-220-3

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

886pF @ 100V

Gate to Source Voltage (Vgs) :

20V

REACH SVHC :

Unknown

Rds On (Max) @ Id, Vgs :

380m Ω @ 6A, 10V

Element Configuration :

Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Published :

2017

Turn On Delay Time :

13 ns

Fall Time (Typ) :

12 ns

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

29 ns

Mounting Type :

Through Hole

Factory Lead Time :

18 Weeks

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Number of Elements :

1

Mount :

Through Hole

Operating Mode :

ENHANCEMENT MODE