SIHP12N50E-BE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Maximum Operating Temperature :

+ 150 C

Vgs(th) (Max) @ Id :

4V @ 250µA

Supplier Device Package :

TO-220AB

Transistor Polarity :

N-Channel

FET Type :

N-Channel

Product Type :

MOSFET

Product Category :

MOSFET

RoHS :

Details

Minimum Operating Temperature :

- 55 C

Package / Case :

TO-220-3

Subcategory :

MOSFETs

Package :

Tube

Product Status :

Active

Mounting Style :

Through Hole

Power Dissipation (Max) :

114W (Tc)

Mounting Type :

Through Hole

Packaging :

Tube

Series :

-

Operating Temperature :

-55°C ~ 150°C (TJ)

Input Capacitance (Ciss) (Max) @ Vds :

886 pF @ 100 V

Transistor Type :

1 N-Channel

Rise Time :

16 ns

Drive Voltage (Max Rds On, Min Rds On) :

10V

Number of Channels :

1 Channel

Drain to Source Voltage (Vdss) :

500 V

Current - Continuous Drain (Id) @ 25°C :

10.5A (Tc)

Rds On (Max) @ Id, Vgs :

380mOhm @ 6A, 10V

Channel Mode :

Enhancement

Brand :

Vishay / Siliconix

Manufacturer :

Vishay

Vgs (Max) :

±30V

Gate Charge (Qg) (Max) @ Vgs :

50 nC @ 10 V

FET Feature :

-

Configuration :

Single