SIA517DJ-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Number of Channels :

2

Number of Elements :

2

Mounting Type :

Surface Mount

Number of Pins :

6

Weight :

28.009329mg

FET Feature :

Logic Level Gate

Input Capacitance (Ciss) (Max) @ Vds :

500pF @ 6V

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Max Junction Temperature (Tj) :

150°C

Height :

800μm

Terminal Form :

NO LEAD

Continuous Drain Current (ID) :

4.5A

Base Part Number :

SIA517

Power Dissipation :

1.9W

REACH SVHC :

Unknown

Pbfree Code :

yes

JESD-609 Code :

e3

Turn On Delay Time :

30 ns

Operating Mode :

ENHANCEMENT MODE

Width :

2.05mm

Packaging :

Tape and Reel (TR)

Series :

TrenchFET®

ECCN Code :

EAR99

Rise Time :

25ns

Fall Time (Typ) :

25 ns

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 8V

Turn-Off Delay Time :

30 ns

Length :

2.05mm

Number of Terminations :

6

Transistor Application :

SWITCHING

Pin Count :

6

Mount :

Surface Mount

Published :

2017

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Nominal Vgs :

400 mV

Drain to Source Voltage (Vdss) :

12V

FET Type :

N and P-Channel

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

29m Ω @ 5A, 4.5V

Drain to Source Breakdown Voltage :

12V

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

1V @ 250μA

Terminal Finish :

Matte Tin (Sn)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Factory Lead Time :

14 Weeks

Time@Peak Reflow Temperature-Max (s) :

40

Max Power Dissipation :

6.5W

Gate to Source Voltage (Vgs) :

8V

Package / Case :

PowerPAK® SC-70-6 Dual