SIA511DJ-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Type :

N and P-Channel

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 6V

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

12V

Published :

2009

Package / Case :

PowerPAK® SC-70-6 Dual

Drain to Source Breakdown Voltage :

12V

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 8V

Number of Pins :

6

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

FET Feature :

Logic Level Gate

Threshold Voltage :

1V

Number of Elements :

2

Rds On (Max) @ Id, Vgs :

40m Ω @ 4.2A, 4.5V

Vgs(th) (Max) @ Id :

1V @ 250μA

Pin Count :

6

Mount :

Surface Mount

Number of Terminations :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

10 ns

Continuous Drain Current (ID) :

4.5A

REACH SVHC :

Unknown

Nominal Vgs :

1 V

Turn-Off Delay Time :

20 ns

Base Part Number :

SIA511

Element Configuration :

Dual

Power Dissipation :

6.5W

Max Power Dissipation :

6.5W

Series :

TrenchFET®

Rise Time :

12ns

Gate to Source Voltage (Vgs) :

8V