SI9934BDY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Power Dissipation :

1.1W

Operating Temperature :

-55°C~150°C TJ

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Fall Time (Typ) :

35 ns

Number of Terminations :

8

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 4.5V

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

-6.4A

Rds On (Max) @ Id, Vgs :

35m Ω @ 6.4A, 4.5V

Peak Reflow Temperature (Cel) :

260

Drain to Source Breakdown Voltage :

-12V

FET Feature :

Logic Level Gate

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

1.55mm

Base Part Number :

SI9934

Terminal Finish :

Matte Tin (Sn)

Element Configuration :

Dual

Mounting Type :

Surface Mount

ECCN Code :

EAR99

FET Type :

2 P-Channel (Dual)

Rise Time :

35ns

Turn On Delay Time :

19 ns

Time@Peak Reflow Temperature-Max (s) :

40

Radiation Hardening :

No

Length :

5mm

Series :

TrenchFET®

Pbfree Code :

yes

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate to Source Voltage (Vgs) :

8V

Pin Count :

8

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

12V

Width :

4mm

Published :

2009

Resistance :

35mOhm

Max Power Dissipation :

1.1W

Number of Elements :

2

Packaging :

Tape and Reel (TR)

Threshold Voltage :

-1.4V

REACH SVHC :

No SVHC

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Turn-Off Delay Time :

80 ns

Number of Pins :

8

Current - Continuous Drain (Id) @ 25°C :

4.8A