SI9933CDY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Max Power Dissipation :

470mW

Published :

2009

Number of Pins :

8

FET Feature :

Logic Level Gate

ECCN Code :

EAR99

Power - Max :

3.1W

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Weight :

186.993455mg

Mount :

Surface Mount

Pbfree Code :

yes

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Terminations :

8

Input Capacitance (Ciss) (Max) @ Vds :

665pF @ 10V

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

30

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Element Configuration :

Dual

FET Type :

2 P-Channel (Dual)

Resistance :

58mOhm

Series :

TrenchFET®

Base Part Number :

SI9933

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

-20V

Threshold Voltage :

-1.4V

Operating Temperature :

-50°C~150°C TJ

Turn On Delay Time :

21 ns

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

12V

Rise Time :

50ns

Operating Mode :

ENHANCEMENT MODE

Contact Plating :

Tin

Current - Continuous Drain (Id) @ 25°C :

4A

Height :

1.55mm

Drain to Source Voltage (Vdss) :

20V

Continuous Drain Current (ID) :

-4A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

58m Ω @ 4.8A, 4.5V

Turn-Off Delay Time :

29 ns

Number of Channels :

2

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Width :

4mm

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

4A

Factory Lead Time :

14 Weeks

Transistor Application :

SWITCHING

Length :

5mm

Pin Count :

8

Number of Elements :

2

Fall Time (Typ) :

13 ns