SI9933CDY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Lead Free :

Lead Free

Turn On Delay Time :

21 ns

Power Dissipation :

3.1W

Radiation Hardening :

No

Number of Pins :

8

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Factory Lead Time :

14 Weeks

Threshold Voltage :

-1.4V

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

30

Length :

5mm

Resistance :

58mOhm

Series :

TrenchFET®

Pbfree Code :

yes

Element Configuration :

Dual

Number of Elements :

2

FET Type :

2 P-Channel (Dual)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

Contact Plating :

Tin

Mount :

Surface Mount

Terminal Form :

Gull wing

REACH SVHC :

Unknown

Drain to Source Voltage (Vdss) :

20V

Weight :

186.993455mg

Height :

1.55mm

Gate to Source Voltage (Vgs) :

12V

Mounting Type :

Surface Mount

Nominal Vgs :

-1.4 V

Max Power Dissipation :

3.1W

Input Capacitance (Ciss) (Max) @ Vds :

665pF @ 10V

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Fall Time (Typ) :

13 ns

Rds On (Max) @ Id, Vgs :

58m Ω @ 4.8A, 4.5V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain Current-Max (Abs) (ID) :

4A

Base Part Number :

SI9933

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Pin Count :

8

Number of Terminations :

8

Rise Time :

50ns

Number of Channels :

2

JESD-609 Code :

e3

Operating Temperature :

-50°C~150°C TJ

Continuous Drain Current (ID) :

4A

Width :

4mm

Published :

2011

FET Feature :

Logic Level Gate

Turn-Off Delay Time :

29 ns