SI9926BDY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Supplier Device Package :

8-SO

Continuous Drain Current (ID) :

6.2A

Published :

2015

Mount :

Surface Mount

Max Power Dissipation :

1.14W

Weight :

506.605978mg

Turn On Delay Time :

35 ns

Element Configuration :

Dual

Rds On (Max) @ Id, Vgs :

20mOhm @ 8.2A, 4.5V

Min Operating Temperature :

-55°C

Number of Pins :

8

Power - Max :

1.14W

Width :

4mm

Drain to Source Resistance :

20mOhm

FET Type :

2 N-Channel (Dual)

FET Feature :

Logic Level Gate

Series :

TrenchFET®

Fall Time (Typ) :

15 ns

Length :

5mm

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

12V

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Turn-Off Delay Time :

31 ns

RoHS Status :

ROHS3 Compliant

Rds On Max :

20 mΩ

Drain to Source Breakdown Voltage :

20V

Drain to Source Voltage (Vdss) :

20V

Rise Time :

50ns

Nominal Vgs :

600 mV

Base Part Number :

SI9926

Max Operating Temperature :

150°C

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Number of Channels :

2

Height :

1.55mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 4.5V

Current - Continuous Drain (Id) @ 25°C :

6.2A