SI7540DP-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Continuous Drain Current (ID) :

11.8A

Fall Time (Typ) :

42 ns

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Length :

4.9mm

Nominal Vgs :

1.5 V

Rds On (Max) @ Id, Vgs :

17m Ω @ 11.8A, 4.5V

Rise Time :

42ns

FET Feature :

Logic Level Gate

Weight :

506.605978mg

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Terminal Finish :

Matte Tin (Sn)

Transistor Element Material :

SILICON

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

TrenchFET®

Power - Max :

1.4W

Pin Count :

8

Published :

2014

Number of Pins :

8

Max Power Dissipation :

3.5W

Drain Current-Max (Abs) (ID) :

7.6A

Peak Reflow Temperature (Cel) :

260

Terminal Form :

C BEND

Transistor Application :

SWITCHING

Resistance :

17mOhm

JESD-30 Code :

R-XDSO-C6

Turn On Delay Time :

35 ns

Width :

5.89mm

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

1.5V @ 250µA

RoHS Status :

ROHS3 Compliant

Package / Case :

PowerPAK® SO-8 Dual

Lead Free :

Lead Free

Number of Elements :

1

Threshold Voltage :

1.5V

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Height :

1.04mm

FET Type :

N and P-Channel

Power Dissipation :

3.5W

REACH SVHC :

Unknown

Current - Continuous Drain (Id) @ 25°C :

7.6A 5.7A

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 4.5V

Mount :

Surface Mount

Turn-Off Delay Time :

54 ns

Number of Terminations :

6

Time@Peak Reflow Temperature-Max (s) :

40

Radiation Hardening :

No

Number of Channels :

2

Case Connection :

DRAIN

Drain to Source Breakdown Voltage :

12V

Base Part Number :

SI7540

Gate to Source Voltage (Vgs) :

8V