SI7501DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Fall Time (Typ) :

20 ns

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.035Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

3.1W

Threshold Voltage :

3V

Number of Pins :

8

Vgs(th) (Max) @ Id :

3V @ 250µA

Rds On (Max) @ Id, Vgs :

35m Ω @ 7.7A, 10V

FET Type :

N and P-Channel, Common Drain

Turn-Off Delay Time :

25 ns

Number of Terminations :

5

REACH SVHC :

No SVHC

Pin Count :

8

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Radiation Hardening :

No

Element Configuration :

Dual

Min Operating Temperature :

-55°C

Terminal Form :

C BEND

Operating Mode :

ENHANCEMENT MODE

Max Operating Temperature :

150°C

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Turn On Delay Time :

10 ns

Gate to Source Voltage (Vgs) :

25V

Max Power Dissipation :

1.6W

Series :

TrenchFET®

FET Feature :

Logic Level Gate

Terminal Finish :

PURE MATTE TIN

Base Part Number :

SI7501

Number of Elements :

2

Mount :

Surface Mount

Package / Case :

PowerPAK® 1212-8 Dual

Published :

2012

Continuous Drain Current (ID) :

5.4A

Time@Peak Reflow Temperature-Max (s) :

30

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

30V

Pbfree Code :

yes

Packaging :

Cut Tape (CT)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rise Time :

20ns

JESD-30 Code :

S-XDSO-C5

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

5.4A 4.5A

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260