SI7501DN-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Length :

3.05mm

Transistor Application :

SWITCHING

Turn On Delay Time :

10 ns

Continuous Drain Current (ID) :

5.4A

Number of Terminations :

5

Vgs(th) (Max) @ Id :

3V @ 250µA

Rds On (Max) @ Id, Vgs :

35m Ω @ 7.7A, 10V

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

20 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Current - Continuous Drain (Id) @ 25°C :

5.4A 4.5A

Pin Count :

8

Pbfree Code :

yes

Series :

TrenchFET®

Gate to Source Voltage (Vgs) :

25V

Drain Current-Max (Abs) (ID) :

4.5A

Number of Elements :

2

Rise Time :

20ns

Package / Case :

PowerPAK® 1212-8 Dual

Max Operating Temperature :

150°C

Base Part Number :

SI7501

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Min Operating Temperature :

-55°C

Drain to Source Breakdown Voltage :

30V

FET Feature :

Logic Level Gate

Width :

3.05mm

Max Power Dissipation :

1.6W

Terminal Form :

C BEND

Power Dissipation :

3.1W

Published :

2011

Turn-Off Delay Time :

25 ns

JESD-609 Code :

e3

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99

Resistance :

35mOhm

Radiation Hardening :

No

FET Type :

N and P-Channel, Common Drain

Terminal Finish :

Matte Tin (Sn)

Number of Pins :

8

Peak Reflow Temperature (Cel) :

260

Packaging :

Cut Tape (CT)

JESD-30 Code :

S-XDSO-C5

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

1.04mm

Mounting Type :

Surface Mount