SI7530DP-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain Current-Max (Abs) (ID) :

3A

Vgs(th) (Max) @ Id :

3V @ 250µA

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

75m Ω @ 4.6A, 10V

Max Power Dissipation :

1.5W

Current - Continuous Drain (Id) @ 25°C :

3A 3.2A

Mount :

Surface Mount

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

15A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

9 ns

Max Operating Temperature :

150°C

Radiation Hardening :

No

Case Connection :

DRAIN

Number of Terminations :

6

JESD-30 Code :

R-XDSO-C6

Packaging :

Cut Tape (CT)

Element Configuration :

Dual

ECCN Code :

EAR99

Pin Count :

8

Terminal Form :

C BEND

FET Type :

N and P-Channel

Terminal Finish :

Matte Tin (Sn)

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

2

Peak Reflow Temperature (Cel) :

260

Drain-source On Resistance-Max :

0.075Ohm

Drain to Source Breakdown Voltage :

60V

Series :

TrenchFET®

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

11 mJ

FET Feature :

Logic Level Gate

Published :

2011

Continuous Drain Current (ID) :

3A

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

PowerPAK® SO-8 Dual

Turn-Off Delay Time :

65 ns

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Rise Time :

9ns

Min Operating Temperature :

-55°C

Power - Max :

1.4W 1.5W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Base Part Number :

SI7530