SI6562CDQ-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Radiation Hardening :

No

Lead Free :

Lead Free

FET Type :

N and P-Channel

Base Part Number :

SI6562

Number of Terminations :

8

REACH SVHC :

Unknown

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

6.7A 6.1A

Factory Lead Time :

14 Weeks

Turn On Delay Time :

30 ns

Continuous Drain Current (ID) :

6.1A

Rise Time :

25ns

Published :

2016

Number of Pins :

8

Power - Max :

1.6W 1.7W

Max Junction Temperature (Tj) :

150°C

Pbfree Code :

yes

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

12V

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Weight :

157.991892mg

Number of Channels :

2

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Terminal Finish :

MATTE TIN

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

20V

FET Feature :

Logic Level Gate

Input Capacitance (Ciss) (Max) @ Vds :

850pF @ 10V

Packaging :

Tape and Reel (TR)

Number of Elements :

2

Max Power Dissipation :

1.7W

Time@Peak Reflow Temperature-Max (s) :

30

Threshold Voltage :

600mV

Transistor Application :

SWITCHING

ECCN Code :

EAR99

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rds On (Max) @ Id, Vgs :

22m Ω @ 5.7A, 4.5V

Width :

4.4mm

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Transistor Element Material :

SILICON

Turn-Off Delay Time :

45 ns

Series :

TrenchFET®

Fall Time (Typ) :

25 ns

Mount :

Surface Mount

Drain Current-Max (Abs) (ID) :

6.7A

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Pin Count :

8

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

3mm

Height :

1.2mm